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Article – Journal of Nanoscience and Technology

Journal of Nanoscience and Technology, Volume 5,Issue 4,2019 Pages 802-805


Effect of Annealing Temperature on Hydrogen Gas Sensitivity of Nanocrystalline SnO2 Thin Films
S.V. Jagtap, A.S. Tale, S.D. Thakare, M.J. Pawar*

https://doi.org/10.30799/jnst.264.19050416

Thin films of pure nanocrystalline SnO2 are deposited using sol–gel technique bare Si (100) substrates at different ageing time and annealing temperatures. The structural and morphological properties of these films are investigated using XRD and TEM techniques. The sensitivity of these films was tested to H2 gas. A SnO2 thin film aged for 7 h and annealed at 450 °C shows very high responses to H2 and excellent selectivity for H2 gas at a low operating temperature of 50 °C. The response and recovery time of SnO2 thin films is discussed.



Keywords: Sol-Gel Method; Nanocrystalline SnO2; Gas Sensor;