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Article – Journal of Nanoscience and Technology

Journal of Nanoscience and Technology, Volume 4,Issue 2,2018 Pages 366-368


Spin Polarization Efficiency in a Diluted Magnetic Nano-Semiconductor Quantum Well System
K. Mathan Kumar, A. John Peter*

https://doi.org/10.30799/jnst.sp209.18040209

Diluted magnetic semiconductors (DMS) in which a fraction of non-magnetic cation is replaced by any transition metal ions. They are considered to have wide potential applications for magneto-optic devices. In the present work, the magnetic field is applied externally in a diluted magnetic semiconductor quantum well to investigate spin transmission properties. The material taken for the study is ZnMnSe/ZnSe quantum well. Rashba spin orbit interaction on the resonant spin polarized transport in this heterostructure quantum well is studied. The plane wave function of the electron is applied to obtain the energy eigen values. The mean field approximation is employed to investigate the interaction of the host electron and the localized magnetic impurities. The large polarization occurs in DMS due to the exchange interaction between the local magnetic impurity and the electrons and this effect lifts the degeneracy of spin-up and spin down electron states. The obtained results, on spindependent tunneling, may be used in the spin based devices especially in the spin field effect transistors.



Keywords: Spin; Quantum Well; Diluted Magnetic Semiconductor;